Recombination pc1d3/15/2024 ![]() It has been found that the short circuit current 3.192 A, open circuit voltage 0.8959 V and power conversion efficiency 25.78% of InGaP/GaAs solar cell at window layer thickness 30 nm with doping level 1.00E+17cm3. IQD calculated by PC1D at 300K as a function of wavelength for the PQED photodiodes with bulk doping concentration of 2 ×1012 cm3, bulk lifetime bulk 0.4ms, surface recombination velocity S eff 10cms1 and reverse bias voltage of 5V (solid line). We also reviewed the effect of temperature on the performance of the solar cell. For this, we have varied thickness and doping level of InGaP window layer and performance of the solar cell has been examined with the help of current-voltage (I-V) characteristics. In this paper, we explored InGaP window layer for GaAs solar cell and analyzed performance with the help of PC1D simulation software. An efficient window layer is essential to check the front surface recombination in the solar cell. Improving the overall performance of the PV cell can play crucial role to the total generated photovoltaic power worldwide. Devendra, Raju Wagle, Anik Shrivastava and Deependra Parajuli Abstract ![]() InGaP Window Layer for Gallium Arsenide (GaAs) based Solar Cell Using PC1D Simulation ![]()
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